Nonvolatile memory devices and methods of programming nonvolatile memory devices

摘要

A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

主权项

1. A method of programming a nonvolatile memory device including a plurality of memory cells connected with a plurality of word lines and a plurality of bit lines, the method comprising:
performing a first program loop according to program data loaded in page buffers; wherein the first program loop includes:
applying a first program voltage to a selected word line among the plurality of word lines;applying a first verify voltage to the selected word line; andstoring a first verify result related with first memory cells targeted to a first program state which are verified using the first verify voltage during the first program loop; performing a second program loop according to the program data loaded in the page buffers, wherein the second program loop includes:
applying a second program voltage to the selected word line, wherein a program pass or a program fail of the first program state is checked based on the first verify result during applying the second program voltage, wherein when the first program state is program failed, the second program loop further includes:
applying the first verify voltage to the selected word line; andstoring a second verify result related with the first memory cells targeted to the first program state which are verified using the first verify voltage during the second program loop, wherein when the first program state is program passed, the first verify voltage is not applied to the selected word line at the second program loop.