发明名称 Apparatuses and methods including supply current in memory
摘要 Some embodiments include apparatuses and methods having first conductive lines, second conductive lines, a memory array including memory cells, each of the memory cells coupled between one of the first conductive lines and one of the second conductive lines. At least one of such apparatuses and methods can include a module configured to cause a first current from a first current source and a second current from a second current source to flow through a selected memory cell among the memory cells during an operation of storing information in the selected memory cell. Other embodiments including additional apparatuses and methods are described.
申请公布号 US9064566(B2) 申请公布日期 2015.06.23
申请号 US201414216115 申请日期 2014.03.17
申请人 Micron Technology, Inc. 发明人 Dodge Richard
分类号 G11C5/14;G11C13/00;G11C7/12;G11C29/02 主分类号 G11C5/14
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A apparatus comprising: a data line; a first conductive line and a second conductive line; a memory cell coupled between the data line and the second conductive line; and a module configured to cause a first current from a first current source to flow between the first conductive line and the data line through the memory cell during an operation of storing information in the memory cell, and to cause a second current from a second current source to flow between the second conductive line and the data line through the memory cell during the operation of storing information in the memory cell.
地址 Boise ID US
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