Optimization of variable resistance memory cells

摘要

A data storage device may generally be constructed and operated with at least one variable resistance memory cell configured with non-factory operational parameters by a controller. The non-factory operational parameters are assigned in response to an identified variance from a predetermined threshold in at least one variable resistance memory cell.

主权项

1. An apparatus comprising at least one non-defective variable resistance memory cell connected to an optimization circuit and a controller, the optimization circuit configured to set the at least one variable resistance memory cell with non-factory operational parameters as directed by the controller, the non-factory operational parameters being outside factory provided specifications and assigned in response to a non-defective predicted variance from a predetermined threshold in at least one variable non-defective resistance memory cell.