Topcoat compositions and photolithographic methods

摘要

Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a polymer system that includes a matrix polymer and a surface active polymer. The matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. A solvent system includes a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent. The first organic solvent has a higher surface energy than a surface energy of the surface active polymer, and a higher boiling point than a boiling point of the second organic solvent.

主权项

1. A method of forming a photolithographic pattern, comprising:
(a) applying a photoresist layer over a substrate; (b) applying over the photoresist composition layer a layer of a topcoat composition, wherein the topcoat composition comprises:
a polymer system comprising a matrix polymer and a surface active polymer, wherein the surface active polymer comprises one or more acid-labile groups, wherein the matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and wherein the surface active polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein a layer of the topcoat composition in a dried state has a water receding contact angle of from 80.2 to 85° ; anda solvent system comprising a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent,wherein the first organic solvent has a higher surface energy than a surface energy of the surface active polymer; andwherein the first organic solvent has a higher boiling point than a boiling point of the second organic solvent; (c) exposing the photoresist layer to actinic radiation; and (d) contacting the exposed photoresist layer with a developer to form a photoresist pattern.