发明名称 Graphene formation
摘要 Technologies are generally described for forming graphene and structures including graphene. In an example, a system effective to form graphene may include a source of carbon atoms and a reaction chamber configured in communication with the source of carbon atoms. The reaction chamber may include a first and second layer of a host material. The host material may include a crystalline compound with a layer structure with a layer spacing in a range from about 1.5 Å to about 33 Å. The reaction chamber may be adapted effective to move at least six carbon atoms from the source into the reaction chamber. The reaction chamber may be configured effective to move the at least six carbon atoms in between the first and the second layer. The reaction chamber may be adapted effective to react the carbon atoms under reaction conditions sufficient to form the graphene.
申请公布号 US9061915(B2) 申请公布日期 2015.06.23
申请号 US201113147266 申请日期 2011.03.09
申请人 Empire Technology Development LLC 发明人 Roundhill David Max
分类号 C08K3/04;C01B31/00;B82Y40/00;C01B31/04;B82Y30/00 主分类号 C08K3/04
代理机构 Moritt Hock & Hamroff LLP 代理人 Rubin, Esq. Steven S.;Moritt Hock & Hamroff LLP
主权项 1. A method to form graphene, the method comprising: moving at least six carbon atoms from outside of a reaction chamber into an inside of the reaction chamber; moving the at least six carbon atoms in between a first layer of a host material and a second layer of the host material in the reaction chamber, wherein the host material includes a crystalline compound with a layer structure with a layer spacing in a range from about 1.5 Å to about 33 Å and the host material includes at least one of metal hydrogen phosphate, molybdenum disulfide, or boron nitride; and reacting the at least six carbon atoms under reaction conditions sufficient to form the graphene.
地址 Wilmington DE US