Semiconductor structure

摘要

A semiconductor structure includes a substrate, an undoped GaP insulating layer formed over the substrate, and a semiconductor layer formed over the GaP layer.

主权项

1. A field-effect transistor, comprising:
a substrate; an undoped GaP layer overlying the substrate; a Si1-xGex layer overlying the GaP layer; a fin-shaped Si structure overlying the Si1-xGex layer, said fin-shaped Si structure including a source region and a drain region, wherein the undoped GaP layer and the Si1-xGex layer substantially overlaps the substrate, and wherein the undoped GaP layer and the Si1-xGex layer overlap more of the substrate than the fin-shaped Si structure; and a gate overlying the fin-shaped Si structure.