Semiconductor device

摘要

A semiconductor device 10 includes an element domain 40 and a termination domain 50 that surrounds the element domain 40. The element domain 40 and the termination domain 50 respectively include a second conductive type drift region 18. A gate trench 38 may be provided in the element domain 40. The termination domain 50 may be provided with a termination trench 22 surrounding the element domain. A first conductive type floating region surrounded by the drift region 18 is not provided at a bottom of the gate trench 38, and a first conductive type floating region 20 surrounded by the drift region 18 is provided at a bottom of the termination trench 22.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including an element domain and a termination domain that surrounds the element domain; a first main electrode disposed on an upper surface of the semiconductor substrate; and a second main electrode disposed on a lower surface of the semiconductor substrate; wherein (a) the element domain comprises a first portion of a body region of a first conductivity type, a first portion of a drift region of a second conductivity type opposite to the first conductivity type, a gate electrode, and an insulator, the first portion of the body region exposed at the upper surface of the semiconductor substrate is a first conductive type region and contacts with the first main electrode, the first portion of the drift region disposed on a lower surface of the first portion of the body region, the gate electrode is disposed within a gate trench, wherein the gate trench penetrates the first portion of the body region and extends to said first portion of the drift region, and the insulator is disposed between the gate electrode and a wall of the gate trench, (b) the termination domain comprises at least a second portion of said drift region, and the termination domain is provided with at least two termination trenches surrounding the element domain, wherein each of the at least two terminal trenches is extending from the upper surface of the semiconductor substrate to the second portion of said drift region, wherein the at least two terminal trenches are spaced apart from each other by an interval, and (c) a floating region of the first conductivity type is provided at a bottom of each of the termination trenches but not provided at a bottom of the gate trench.