Semiconductor device

摘要

A semiconductor device manufacturing method includes forming a first capacitance film formed on the lower electrode; forming an intermediate electrode in a first region on the first capacitance film, wherein the first capacitance is interposed between the intermediate electrode and the lower electrode; forming a second capacitance film on the intermediate electrode to be interposed between the first capacitance film and the second capacitance film; and forming an upper electrode, wherein at least a portion of the second capacitance film is interposed between the upper electrode and the intermediate electrode; the upper electrode extending to a second region outside the first region, and having at least the first capacitance film interposed between the upper electrode and the lower electrode in the second region.

主权项

1. A semiconductor device comprising:
a lower electrode formed over a surface of a semiconductor substrate; a first capacitance film formed on a surface of the lower electrode; an intermediate electrode formed on a surface of the first capacitance film over at least a portion of the tower electrode, at least the first capacitance film being interposed between the intermediate electrode and at least the portion of the lower electrode; a second capacitance film formed on a surface of the intermediate electrode such that the intermediate electrode is interposed between the first capacitance film and the second capacitance film, the first capacitance film and the second capacitance film being of different types; and an upper electrode formed on a surface of the second capacitance film over the intermediate electrode, at least the second capacitance film being interposed between the upper electrode and at least a portion of the intermediate electrode, wherein an outer edge portion of the first capacitance film and an outer edge portion of the second capacitance film are vertically disposed to coincide with an edge portion of the tower electrode.