Field-effect semiconductor device and manufacturing method therefor

摘要

According to an embodiment of a field-effect semiconductor device, the field-effect semiconductor device includes a semiconductor body and a source electrode. The semiconductor body includes a drift region, a gate region and a source region of a first semiconductor material having a first band-gap and an anode region of a second semiconductor material having a second band-gap lower than the first band-gap. The drift region is of a first conductivity type. The gate region forms a pn-junction with the drift region. The source region is of the first conductivity type and in resistive electric connection with the drift region and has a higher maximum doping concentration than the drift region. The anode region is of the second conductivity type, forms a heterojunction with the drift region and is spaced apart from the source region. The source metallization is in resistive electric connection with the source region and the anode region.

主权项

1. A field-effect semiconductor device, comprising:
a semiconductor body of a first band-gap material and having a main surface, the semiconductor body comprising in a cross-section which is substantially vertical to the main surface:
a drift region of a first conductivity type;a first channel region of the first conductivity type and adjoining the drift region;a first gate region forming a first pn-junction with the first channel region;a first body region arranged below the first gate region and forming a second pn-junction with the first channel region such that the first channel region is arranged between the first pn-junction and the second pn-junction; anda first source region of the first conductivity type, having a higher maximum doping concentration than the first channel region and adjoining the first channel region; and an anode region of a second band-gap material having a lower band-gap than the first band-gap material, the anode region being of a second conductivity type and forming a heterojunction with the drift region, wherein the heterojunction and the first source region do not overlap when viewed from above.