发明名称 |
Semiconductor chips having a dual-layered structure, packages having the same, and methods of fabricating the semiconductor chips and the packages |
摘要 |
Dual-layered structural semiconductor chips are provided. The semiconductor chip includes a first semiconductor chip and a second semiconductor chip bonded to the first semiconductor chip. The first semiconductor chip includes a first substrate having a first bottom surface. The second semiconductor chip includes a second substrate having a second bottom surface. The first bottom surface directly contacts the second bottom surface. The related packages and the related methods are also provided. |
申请公布号 |
US9064862(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201213564431 |
申请日期 |
2012.08.01 |
申请人 |
SK Hynix Inc. |
发明人 |
Hwang In Chul;Kim Jae Myun;Kim Seung Jee;Lee Jin Su |
分类号 |
H01L21/50;H01L25/00;H01L21/768;H01L25/065;H01L23/00 |
主分类号 |
H01L21/50 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A dual-layered structural semiconductor chip, the semiconductor chip comprising:
a first semiconductor chip including a first silicon substrate having a first bottom silicon surface; and a second semiconductor chip including a second silicon substrate having a second bottom silicon surface, wherein the first bottom silicon surface of the first silicon substrate directly contacts the second bottom silicon surface of the second silicon substrate. |
地址 |
Gyeonggi-do KR |