发明名称 Semiconductor chips having a dual-layered structure, packages having the same, and methods of fabricating the semiconductor chips and the packages
摘要 Dual-layered structural semiconductor chips are provided. The semiconductor chip includes a first semiconductor chip and a second semiconductor chip bonded to the first semiconductor chip. The first semiconductor chip includes a first substrate having a first bottom surface. The second semiconductor chip includes a second substrate having a second bottom surface. The first bottom surface directly contacts the second bottom surface. The related packages and the related methods are also provided.
申请公布号 US9064862(B2) 申请公布日期 2015.06.23
申请号 US201213564431 申请日期 2012.08.01
申请人 SK Hynix Inc. 发明人 Hwang In Chul;Kim Jae Myun;Kim Seung Jee;Lee Jin Su
分类号 H01L21/50;H01L25/00;H01L21/768;H01L25/065;H01L23/00 主分类号 H01L21/50
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A dual-layered structural semiconductor chip, the semiconductor chip comprising: a first semiconductor chip including a first silicon substrate having a first bottom silicon surface; and a second semiconductor chip including a second silicon substrate having a second bottom silicon surface, wherein the first bottom silicon surface of the first silicon substrate directly contacts the second bottom silicon surface of the second silicon substrate.
地址 Gyeonggi-do KR