Method for removing oxide film formed on surface of silicon wafer

摘要

Disclosed is a method for removing an oxide film formed on a surface of a silicon wafer, comprising steps of: preparing a silicon wafer having an oxide film formed thereon; arranging a discoid wafer mounting stage, which has a contact portion with the oxide film being formed of an acid-resistant resin layer, in a reaction container of a vapor-phase etching apparatus; mounting the silicon wafer on the mounting stage in such a manner that a wafer center coincides with a central axis of the mounting stage; and circulating a hydrogen fluoride containing gas into the reaction container and removing the oxide film from an interface between a chamfered surface and a wafer lower surface toward the inner side of the wafer until a desired interval a is obtained, wherein the desired interval a is adjusted by changing a stage diameter of the mounting stage.

主权项

1. A method for removing an oxide film formed on a surface of a silicon wafer, comprising:
preparing a silicon wafer which has an upper surface, a lower surface, a chamfered surface, and an end surface and has an oxide film formed on at least the entire lower surface of the silicon wafer; arranging one or more discoid wafer mounting stages, each of which has at least a contact portion with the oxide film being formed of an acid-resistant resin layer, in a reaction container of a vapor-phase etching apparatus; mounting the silicon wafer on the mounting stage in such a manner that the lower surface of the silicon wafer faces an upper face of the mounting stage and a wafer center coincides with a central axis of the mounting stage; circulating a hydrogen fluoride containing gas into the reaction container and removing the oxide film from an interface between the chamfered surface and the wafer lower surface toward the inner side of the wafer until a desired interval a is obtained; and adjusting the desired interval a by changing a stage diameter of the mounting stage.