Methods for embedding conducting material and devices resulting from said methods

摘要

Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.

主权项

1. A capped semiconductor device, comprising:
a substrate comprising a surface; at least one device formed on the surface; a release layer formed at least in an area of the surface that encircles the at least one device, wherein the release layer comprises a stack of silicon carbide layers having helium plasma treated interfaces between adjacent ones of the silicon carbide layers, the stack of silicon carbide layers being configured to break along one or more of the helium plasma treated interfaces of the stack of silicon carbide layers under a removing force; at least one wall structure formed on the release layer around the at least one device; and at least one removable cap formed on the at least one wall structure.