发明名称 |
Tungsten oxide photocatalyst modified with copper ion, and process for production thereof |
摘要 |
The present invention relates to a copper ion-modified tungsten oxide photocatalyst subjected to chemical etching treatment with a basic aqueous solution in which a rate of change in diffuse reflectance of the photocatalyst as measured at a wavelength of 700 nm between before and after irradiated with an ultraviolet light in atmospheric air is less than 10%; and a process for producing a copper ion-modified tungsten oxide photocatalyst which includes a copper ion modifying step of modifying a tungsten oxide powder with a copper ion; a chemical etching step of subjecting the tungsten oxide powder to chemical etching treatment with a basic aqueous solution, the chemical etching treatment being carried out either before or after the copper ion modifying step; and a drying step of drying the product obtained after the above steps at a temperature of 200° C. or lower. |
申请公布号 |
US9061272(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201113579224 |
申请日期 |
2011.02.15 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
Hosogi Yasuhiro |
分类号 |
B01J35/00;B01J23/888;B01J37/06;B01J35/10;B01D53/86 |
主分类号 |
B01J35/00 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A copper ion-modified tungsten oxide photocatalyst subjected to chemical etching treatment with a basic aqueous solution in which a rate of change in diffuse reflectivity of the photocatalyst as measured at a wavelength of 700 nm after irradiation with an ultraviolet light with a central wavelength of 365 nm at an illumination intensity of 1 mW/cm2 for 72 hours in atmospheric air is less than 10%. |
地址 |
Tokyo JP |