发明名称 Tungsten oxide photocatalyst modified with copper ion, and process for production thereof
摘要 The present invention relates to a copper ion-modified tungsten oxide photocatalyst subjected to chemical etching treatment with a basic aqueous solution in which a rate of change in diffuse reflectance of the photocatalyst as measured at a wavelength of 700 nm between before and after irradiated with an ultraviolet light in atmospheric air is less than 10%; and a process for producing a copper ion-modified tungsten oxide photocatalyst which includes a copper ion modifying step of modifying a tungsten oxide powder with a copper ion; a chemical etching step of subjecting the tungsten oxide powder to chemical etching treatment with a basic aqueous solution, the chemical etching treatment being carried out either before or after the copper ion modifying step; and a drying step of drying the product obtained after the above steps at a temperature of 200° C. or lower.
申请公布号 US9061272(B2) 申请公布日期 2015.06.23
申请号 US201113579224 申请日期 2011.02.15
申请人 SHOWA DENKO K.K. 发明人 Hosogi Yasuhiro
分类号 B01J35/00;B01J23/888;B01J37/06;B01J35/10;B01D53/86 主分类号 B01J35/00
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A copper ion-modified tungsten oxide photocatalyst subjected to chemical etching treatment with a basic aqueous solution in which a rate of change in diffuse reflectivity of the photocatalyst as measured at a wavelength of 700 nm after irradiation with an ultraviolet light with a central wavelength of 365 nm at an illumination intensity of 1 mW/cm2 for 72 hours in atmospheric air is less than 10%.
地址 Tokyo JP