Light emitting diode and method for manufacturing the same

摘要

A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

主权项

1. A method for manufacturing a light emitting diode, comprising:
providing a substrate; forming a first-type semiconductor layer on the substrate; forming a quantum well layer on the first-type semiconductor layer; forming a second-type semiconductor layer on the quantum well layer; patterning the quantum well layer and the second-type semiconductor layer to form a plurality of nanorods; filling a transparent planar material into a space between the nanorods, wherein a top portion of each of the nanorods is exposed out of the transparent planar material; removing a portion of the second-type semiconductor layer, a part of the nanorods, a portion of the first-type semiconductor layer and a portion of the transparent planar material to form a trapezoid sidewall structure such that a portion of the first-type semiconductor layer is exposed; and forming a transparent electrode layer to cover the transparent planar material and the top portion.