| 发明名称 | Semiconductor device including a drift zone and a drift control zone | ||
| 摘要 | A semiconductor device includes a semiconductor body having a drift zone of a first conductivity type and a drift control zone. A junction termination structure is at a first side of the semiconductor body. A first dielectric is between the drift zone and the drift control zone. A second dielectric is at a second side of the semiconductor body. The drift control zone includes a first drift control subregion of the first conductivity type and a second drift control subregion of a second conductivity type between the first drift control subregion and the second dielectric. | ||
| 申请公布号 | US9064953(B2) | 申请公布日期 | 2015.06.23 |
| 申请号 | US201313915934 | 申请日期 | 2013.06.12 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Mauder Anton;Hirler Franz;Wiedenbauer Otto |
| 分类号 | H01L29/66;H01L29/78;H01L29/40;H01L29/06 | 主分类号 | H01L29/66 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor body including a drift zone of a first conductivity type and a drift control zone; a junction termination structure at a first side of the semiconductor body; a first dielectric between the drift zone and the drift control zone; a drain electrode at a second side of the semiconductor body; and a second dielectric at the second side of the semiconductor body and in contact with the drain electrode, wherein the drift control zone includes a first drift control subregion of the first conductivity type and a second drift control subregion of a second conductivity type between the first drift control subregion and the second dielectric. | ||
| 地址 | Villach AT | ||