| 发明名称 | Method of manufacturing a sensor device having a porous thin-film metal electrode | ||
| 摘要 | A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD). | ||
| 申请公布号 | US9064800(B2) | 申请公布日期 | 2015.06.23 |
| 申请号 | US201314132035 | 申请日期 | 2013.12.18 |
| 申请人 | Robert Bosch GmbH | 发明人 | Feyh Ando;O'Brien Gary;Purkl Fabian;Yama Gary;Samarao Ashwin K. |
| 分类号 | H01L21/28;G01N27/414;H01L29/423 | 主分类号 | H01L21/28 |
| 代理机构 | Maginot Moore & Beck LLP | 代理人 | Maginot Moore & Beck LLP |
| 主权项 | 1. A method of fabricating a semiconductor sensor device comprising: providing a substrate; supporting a source region and a drain region with the substrate; forming an insulator layer above the source region and the drain region; and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD). | ||
| 地址 | Stuttgart DE | ||