Method of forming edge devices for improved performance

摘要

A method includes forming a first plurality of fingers over an active area of a semiconductor substrate. Each of the first plurality of fingers has a respective length that extends in a direction that is parallel to width direction of the active area. The first plurality of fingers form at least one gate of at least one transistor having a source and a drain formed by a portion of the active area. A first dummy polysilicon structure is formed over a portion of the active area between an outer one of the first plurality of fingers and a first edge of the semiconductor substrate. A second dummy polysilicon structure is over the semiconductor substrate between the first dummy polysilicon structure and the first edge of the semiconductor substrate.

主权项

1. A method comprising:
forming a first plurality of fingers over an active area of a semiconductor substrate that is disposed in an area surrounded by a shallow trench isolation region, each of the first plurality of fingers having a respective length that extends in a direction that is parallel to width direction of the active area, the first plurality of fingers forming at least one gate of at least one transistor having a source and a drain formed by a portion of the active area; forming a first dummy polysilicon structure over a portion of the active area such that at least a portion of the first dummy polysilicon structure is disposed between an outer one of the first plurality of fingers and a first innermost edge of the shallow trench isolation region; and forming a second dummy polysilicon structure over the semiconductor substrate such that the second dummy polysilicon structure disposed between the first dummy polysilicon structure and a first edge of the semiconductor substrate.