| 发明名称 | Method of manufacturing thin film transistor | ||
| 摘要 | A method of manufacturing a thin-film transistor is provided, including preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed, forming the ink on a substrate in the form of a pattern, and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern. | ||
| 申请公布号 | US9064778(B2) | 申请公布日期 | 2015.06.23 |
| 申请号 | US201414259674 | 申请日期 | 2014.04.23 |
| 申请人 | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY | 发明人 | Lim Jung Ah;Song Yong-Won;Hong Jae-Min;Choi Won-Kook;Eom Dae Seong |
| 分类号 | H01L29/49;H01L29/16;H01L29/66;H01L21/02;H01L29/45;H01L29/43 | 主分类号 | H01L29/49 |
| 代理机构 | Ladas & Parry LLP | 代理人 | Ladas & Parry LLP |
| 主权项 | 1. A method of manufacturing a single-process thin-film transistor, comprising: preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed; forming the ink on a substrate in the form of a pattern; and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern. | ||
| 地址 | Seoul KR | ||