Driving method of semiconductor storage device and semiconductor storage device

摘要

In a memory, a signal holder holds voltages according to data in the storage elements. A busy-signal controller controls a busy-signal. The busy-signal determines whether to permit or reject reception of a read/write enable signal. During reception of the read/write enable signal is rejected, the signal holder holds a first to a third voltages. The first voltage corresponds to target data stored in a first storage element. The second voltage corresponds to first sample data of first logic written to the first storage element. The third voltage corresponds to second sample data of second logic. A sense amplifier detects logic of the target data by comparing a read signal of the first voltage with a reference signal generated by the second and third voltages. The write driver writes the target data/write data to the first storage element. After writing, the reception of the read/write enable signal is permitted.

主权项

1. A semiconductor storage device comprising:
a plurality of resistance change storage elements; a signal holder holding a plurality of voltages according to data stored in the storage elements; a sense amplifier detecting the data stored in the storage elements based on the voltages held in the signal holder; a write driver writing data to the storage elements; and a busy signal controller controlling a busy signal, the busy signal determining whether to permit or reject reception of a read enable signal enabling data to be read from the storage elements or whether to permit or reject reception of a write enable signal enabling data to be written to the storage elements, wherein in a period during which the busy signal controller controls the busy signal to reject the reception of the read enable signal or the write enable signal, the signal holder holds a first voltage, a second voltage and a third voltage, the first voltage corresponding to target data stored in a first storage element selected from among the storage elements, the second voltage corresponding to first sample data of first logic written to the first storage element, the third voltage corresponding to second sample data of second logic opposite to the first logic, the second sample data being written to the first storage element, the sense amplifier detects logic of the target data stored in the first storage element by comparing a read signal based on the first voltage with a reference signal generated based on the second and the third voltages, and the write driver writes the target data or write data to the first storage element, and after the write driver writes the write data, the busy signal controller controls the busy signal to permit the reception of the read enable signal or the write enable signal.