发明名称 Photolithography mask method for a wafer, method for producing same, and photolithography method for wafer using the same
摘要 A photolithography mask for a semiconductor wafer. The mask includes a protrusion section that protrudes from a handling section of the mask. An outer shape of the handling section enables handling by a mask aligner device. The protrusion includes a face surface provided at a level which is different from a face surface area of the handling section.
申请公布号 US9063407(B2) 申请公布日期 2015.06.23
申请号 US201113814882 申请日期 2011.08.10
申请人 DISCO CORPORATION 发明人 Bieck Florian;Spiller Sven
分类号 G03F1/50;G03F1/00 主分类号 G03F1/50
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A photolithography mask for a semiconductor wafer, the mask comprising: a handling section having an outer shape being provided for handling by a mask aligner; a protrusion section that protrudes from the handling section of the mask; and wherein a face surface of the protrusion section is provided at a level which is different from a face surface area of the handling section.
地址 Tokyo JP