Reducing glitching in an ion implanter

摘要

Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.

主权项

1. A method of maintaining an ion implanter, comprising:
operating said ion implanter in normal operating mode for a first time period, wherein a plasma generator is energized at a first power level so as to generate a plasma within an ion source chamber; performing a first plasma-assisted conditioning, after said first time period, in order to reduce a glitch rate, wherein plasma-assisted conditioning is performed by modifying a voltage applied to extraction electrodes in said ion implanter and by operating the plasma generator at a power level greater than said first power level, such that said plasma expands from within said ion source chamber to an extraction region between said ion source chamber and said extraction electrodes; operating said ion implanter in normal operating mode for a second time period, after said first plasma-assisted conditioning; and performing a plasma-assisted cleaning after said second time period, wherein plasma-assisted cleaning is performed by modifying a distance between said ion source chamber and said extraction electrodes and modifying a source gas used in said ion source chamber.