Methods of forming isolation material on FinFET semiconductor devices and the resulting devices

摘要

One method disclosed includes, among other things, forming an initial fin, covering a top surface and a portion of the sidewalls of the initial fin structure with etch stop material, forming a sacrificial gate structure above and around the initial fin structure, forming a sidewall spacer adjacent the sacrificial gate structure, performing at least one process operation to remove the sacrificial gate structure and thereby define a replacement gate cavity, performing at least one etching process through the replacement gate cavity to remove a portion of the initial fin structure so as to thereby define a final fin structure and a channel cavity positioned below the final fin structure, and substantially filling the channel cavity with an insulating material.

主权项

1. A method of forming a FinFET device, the method comprising:
forming an initial fin structure from a semiconductor substrate material, said initial fin structure having sidewalls; covering a top surface and a portion of said sidewalls of said initial fin structure with etch stop material; after forming said etch stop material, forming a sacrificial gate structure above and around said initial fin structure; forming a sidewall spacer adjacent said sacrificial gate structure; performing at least one process operation to remove said sacrificial gate structure and thereby define a replacement gate cavity, wherein said etch stop material on said initial fin structure remains positioned on said initial fin structure while said sacrificial gate structure is removed; performing at least one etching process through said replacement gate cavity to remove a portion of said initial fin structure positioned under said replacement gate cavity that is not covered by said etch stop material so as to thereby define a final fin structure and a channel cavity positioned below said final fin structure; and substantially filling said channel cavity with an insulating material.