Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device

摘要

A semiconductor device includes a first conductive layer; a second conductive layer; and a resistance variable element interposed between the first conductive layer and the second conductive layer and includes a doped first metal oxide layer and a second metal oxide layer. A density of oxygen vacancies of the second metal oxide layer is higher than that of the doped first metal oxide layer. The doped first metal oxide layer includes a doping material implanted thereto to suppress grains in the doped first metal oxide layer from increasing in size.

主权项

1. A semiconductor device comprising:
a first conductive layer; a second conductive layer; and a resistance variable element interposed between the first conductive layer and the second conductive layer, and including a stacked structure of a doped first metal oxide layer and a second metal oxide layer, wherein the doped first metal oxide layer is disposed closer to the first conductive layer than the second metal oxide layer, and the second metal oxide layer is disposed closer to the second conductive layer than the doped first metal oxide layer, wherein a density of oxygen vacancies of the second metal oxide layer is higher than that of the doped first metal oxide layer, and wherein the doped first metal oxide layer comprises a doping material implanted thereto to suppress grains in the doped first metal oxide layer from increasing in size.