Aqueous cleaner for the removal of post-etch residues

摘要

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

主权项

1. An aqueous cleaning composition, comprising at least one corrosion inhibitor, water, at least one etchant, and at least one passivating agent, wherein the at least one corrosion inhibitor comprises dodecylphosphonic acid, wherein said aqueous cleaning composition is suitable for cleaning post-plasma etch residue from a microelectronic device having said residue thereon.