Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer

摘要

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion.

主权项

1. A semiconductor light emitting device, comprising:
a first semiconductor layer including a layer of a first conductivity type; a second semiconductor layer apart from a first direction, the second semiconductor layer including a layer of a second conductivity type different from the first conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a first surface and a second surface, the second surface opposing the light emitting layer, the first surface being opposite to the second surface, the first surface including a plurality of bottom faces and an apical face, a distance between one of the bottom faces and the second surface in the first direction being less than a distance between the apical face and the second surface in the first direction, the bottom faces includes a first face and a second face nearest to the first face, the first face having a first centroid, the second face having a second centroid, the first centroid aligning with the second centroid along a second axis, and hb and rb satisfying
rb/(2·hb)≦0.7, where
hb is a distance between the first face and the apical face in the first direction, andrb is a width of the first face along the second axis.