ARC residue-free etching

摘要

Antireflective residues during pattern transfer and consequential short circuiting are eliminated by employing an underlying sacrificial layer to ensure complete removal of the antireflective layer. Embodiments include forming a hard mask layer over a conductive layer, e.g., a silicon substrate, forming the sacrificial layer over the hard mask layer, forming an optical dispersive layer over the sacrificial layer, forming a silicon anti-reflective coating layer over the optical dispersive layer, forming a photoresist layer over the silicon anti-reflective coating layer, where the photoresist layer defines a pattern, etching to transfer the pattern to the hard mask layer, and stripping at least the optical dispersive layer and the sacrificial layer.

主权项

1. A device comprising:
a conductive pattern formed on a silicon substrate using a patterning stack including a hard mask layer formed over the silicon substrate, a sacrificial layer formed over the hard mask layer, an optical dispersive layer formed over the sacrificial layer, a silicon anti-reflective coating layer formed over the optical dispersive layer, and a photoresist layer formed over the silicon anti-reflective coating layer in a pattern, wherein the conductive pattern is formed by etching to transfer the pattern to the hard mask layer, and stripping at least the optical dispersive layer and the sacrificial layer, and wherein no or substantially no residue from the silicon anti-reflective coating layer remains after the stripping, wherein the sacrificial layer comprises an amorphous carbon material and extends over a side portion of the hard mask layer.