Nonvolatile semiconductor memory device and manufacturing method thereof

摘要

A nonvolatile semiconductor memory device that has a new structure is provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device has a plurality of memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

主权项

1. A nonvolatile semiconductor memory device comprising a plurality of memory strings arranged along a first direction and a second direction being different from the first direction, including at least one memory string having a plurality of electrically programmable memory cells connected in series, the memory string comprising:
a semiconductor layer extending in a third direction perpendicular to a substrate, a first insulation film formed around the semiconductor layer, a charge storage layer formed around the first insulation film, a second insulation film formed around the charge storage layer, a plurality of electrodes formed around the second insulation film, and a plurality of third insulation films formed around the second insulation film, the third insulation films being formed between the electrodes, respectively, wherein a side surface of the electrodes and the third insulation films on the semiconductor layer are uneven, and the electrodes of the at least one memory string are shared with a second memory string adjacent to the at least one memory string in the first direction and a third memory string adjacent to the at least one memory string in the second direction.