Crystallization annealing processes for production of CIGS and CZTS thin-films

摘要

In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, and annealing the precursor layer in the presence of a gaseous phase comprising volatile species, the partial pressure of each volatile species being approximately constant over substantially all of the surface of the precursor layer, the partial pressure of each species being between approximately 0.1 mTorr and 760 Torr, where the presence of the gaseous phase reduces decomposition of volatile species from the precursor layer during annealing.

主权项

1. A method comprising:
depositing a precursor layer onto a substrate, the precursor layer comprising chalcogenide material with one or more volatile species; and annealing the precursor layer in the presence of a gaseous phase comprising one or more of the volatile species, the partial pressure of each volatile species being approximately constant over substantially all of the surface of the precursor layer, the partial pressure of each species being between approximately 0.1 mTorr and 760 Torr, wherein the presence of the gaseous phase reduces decomposition of the volatile species from the precursor layer during annealing.