Deposition of high vapor pressure materials

摘要

The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.

主权项

1. A vacuum deposition apparatus comprising a vacuum deposition source comprising a body having a crucible for holding deposition material, the vacuum deposition apparatus also comprising a conductance portion operatively connecting the vacuum deposition source to a nozzle, the conductance portion including a connection element for mounting the vacuum deposition source external to a vacuum deposition chamber while permitting fluid communication from the vacuum deposition source to the nozzle as the nozzle is extended from the connection element to be positionable within the vacuum deposition chamber for directing vaporized source material to a substrate within the vacuum deposition chamber, the nozzle comprising:
a nozzle conductance tube in fluid communication with the crucible by way of the conductance portion, the nozzle conductance tube extending longitudinally and comprising a plurality of axially spaced openings along the longitude of the nozzle conductance tube through which vaporized deposition material can pass; a jacket surrounding at least a portion of the nozzle conductance tube and extending along the nozzle conductance tube, the jacket providing a pressure controllable region within the jacket and within which the at least a portion of the nozzle conductance tube is positioned, the pressure controllable region having a connection element to connect with a pressure source so that pressure within the pressure controllable region can be independently controlled from an environment of the deposition chamber to create an environment within the pressure controllable region where convective heat transfer is possible between the nozzle conductive tube and the jacket; and at least one heater element positioned within the jacket for providing convective heat transfer with the nozzle conductance tube and the jacket by way of the created environment within the pressure controllable region, wherein the openings along the nozzle conductance tube are operatively connected with nozzle elements that allow fluid communication from within the nozzle conductance tube to outside of the jacket at axial spaced locations to permit fluid communication of vaporized deposition material from the vacuum deposition source to within the vacuum deposition chamber when the nozzle is positioned therein.