| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive sensor and an SAF structure.SOLUTION: Implementations disclosed herein provide a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer of an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer. |
