SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can inhibit a decrease in withstanding voltage and an increase in on-resistance. ! SOLUTION: A silicon carbide semiconductor device comprises a plurality of p type regions 3 to be p type base regions which are selectively provided in a surface layer of a laminated n- type SiC layer 2 on the side opposite to the side of an n type SiC substrate 1 on a surface of the n type SiC substrate 1. It is preferable that an impurity concentration of the p type regions 3 is lower on a gate electrode 7 side than on the n type SiC substrate 1 side. It is preferable that a distance L between adjacent p type regions 3 is 3 μm and under which is capable of ensuring predetermined withstanding voltage. On the n- type SiC layer 2, in w region between adjacent p type regions 3, an n type region 21 having an impurity concentration higher than that of the n- type SiC layer 2. The n type region 21 has an impurity region higher in a part 21a on the gate