| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable and efficient manufacturing method of a semiconductor element which has an Al pad electrode with a film thickness of 5 μm and over in which the occurrence of hillocks is inhibited. ! SOLUTION: The semiconductor element manufacturing method of the present invention comprises the step of sequentially and repeatedly performing a plurality of times: (i) a process of depositing, after a semiconductor substrate before Al pad electrode formation is subjected to reverse sputtering, an Al film at a deposition temperature of 60°C in a vacuum by using a sputtering method; and (ii) a process of introducing a gas into a chamber by interrupting deposition. As a result, the Al pad electrode having a thickness of 5 μm and over is formed. ! COPYRIGHT: (C)2015,JPO&INPIT |
