MANUFACTURING METHOD OF SILICON-CARBIDE SEMICONDUCTOR APPARATUS, AND LASER ANNEAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method capable of stably forming an ohmic electrode.SOLUTION: A spot region on a substrate 10 including a metal film 40 is iteratively irradiated with laser light. The step of repeating the irradiation includes a step of shifting the spot region while partially overlapping the spot region by changing an optical path of laser light. The step of shifting the spot region includes the steps of: scanning the spot region until an ending point position P1 in a first direction D1; and scanning the spot region from a starting point position P2 that is deviated from the ending point position in a second direction D2 crossing the first direction D1, in a third direction D3 where the angle formed with the first direction D1 is equal to or larger than 0° and equal to or smaller than 45°. A step of performing silicidation includes making an inert gas flow in a direction containing a component in an opposite direction to the second direction D2.