SEMICONDUCTOR APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide and easily manufacture a structure of high pressure resistance by using a high-reliability wide band gap semiconductor.SOLUTION: A semiconductor apparatus includes: a semiconductor substrate 1 of a first conductivity type; a semiconductor deposition film 2 of the first conductivity type with a low impurity concentration on a surface of the semiconductor substrate 1; and a termination structure of a device formed on the semiconductor deposition film 2. The semiconductor apparatus includes: a first region 3 of a second conductivity type at least partially surrounding an active region 101 including a metal/semiconductor junction formed on a surface layer of the semiconductor deposition film 2 or a compound structure of the metal/semiconductor junction and an insulator/semiconductor junction; a second region 13 of the second conductivity type formed in a pressure resistant structure part 102 surrounding the active region 101 on the semiconductor deposition film 2; and a plurality of third regions 5 of the second conductivity type which are positioned in a lower part of the second region 13 of the second conductivity type and formed around the first region 3 of the second conductivity type on the surface layer of the semiconductor deposition film 2 at a predetermined interval so as not to be in contact with each other and of which the impurity concentration is higher than that of the second region 13 of the second conductivity type.