发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To inhibit warpage of a substrate due to a stress generated between an insulation film which covers a coil and the substrate in a semiconductor device in which the coil is arranged on one surface side of the substrate.SOLUTION: In a semiconductor device, an insulation film 30 is arranged to wind a coil 20 when viewed from a normal direction with respect to one surface 10a of a substrate 10, regions in a coil formation region in the substrate 10, which are located on the inside and the outside of the coil 20 are made to be exposed. With this configuration, a stress generated between the insulation film 30 and the substrate 10 can be reduced at a part of the one surface 10a of the substrate 10, which is exposed from the insulation film 30 thereby to inhibit warpage of the substrate 10.
申请公布号 JP2015115498(A) 申请公布日期 2015.06.22
申请号 JP20130257285 申请日期 2013.12.12
申请人 DENSO CORP 发明人 YOSHIHARA SHINJI;KITAMURA YASUHIRO
分类号 H01F17/00;H01F41/04;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L23/532;H01L25/00;H01L27/04;H05K1/16 主分类号 H01F17/00
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