发明名称 OXIDE SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide an oxide sputtering target capable of suppressing occurrence of target crack by heightening relative density, achieving sputtering deposition by high power, and depositing a CeO-based thin film excellent in UV cut characteristic.SOLUTION: An oxide sputtering target is an oxide fired body of a metal containing Zn: 30-90 at% and a residue: Ce and inevitable impurities. The oxide fired body has a structure comprising a ZnO phase and a CeOphase in which added Zn exists in the form of ZnO, since formation of a complex oxide of Ce and Zn is a cause of lowering of crack resistance.
申请公布号 JP2015113512(A) 申请公布日期 2015.06.22
申请号 JP20130257816 申请日期 2013.12.13
申请人 MITSUBISHI MATERIALS CORP 发明人 KONDO YUICHI;CHO SHUHIN
分类号 C23C14/34;C04B35/453;C04B35/50 主分类号 C23C14/34
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