发明名称 MAGNETIC STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a magnetic storage element having higher reliability and a manufacturing method thereof. ! SOLUTION: In the magnetic storage element, a reference magnetic pattern 140a includes a first fixed pattern 110a, a second fixed pattern 135a between the first fixed pattern 110a and a tunnel barrier pattern 145a, and an exchange coupling pattern 115a between the first and second fixed patterns. The second fixed pattern 135a includes a polarization enhancement magnetic pattern 130a adjacent to the tunnel barrier pattern 145a, an exchange coupling enhancement magnetic pattern 120a adjacent to the exchange coupling pattern 115a, an intermediate magnetic pattern 125a between the polarization enhancement magnetic pattern 130a and the exchange coupling enhancement magnetic pattern 120a, and a non-magnetic pattern 123a coming into contact with the intermediate magnetic pattern 125a for inducing interface perpendicular magnetic anisotropy. ! COPYRIGHT: (C)2015,JPO&INPIT
申请公布号 JP2015115610(A) 申请公布日期 2015.06.22
申请号 JP20140247769 申请日期 2014.12.08
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK SANG-HWAN ; PARK SOON-OH ; KIM SANG-YONG ; LEE JOON-MYOUNG
分类号 H01L21/8246;G11C11/15;H01L27/105;H01L29/82;H01L43/08;H01L43/12 主分类号 H01L21/8246
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