| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which prevents current concentration in a region near a current supply part even when high current is supplied.SOLUTION: The semiconductor light emitting element comprises: a first electrode which has a semiconductor layer containing a p-type semiconductor layer, a light emitting layer and an n-type semiconductor, on a substrate, and is formed so as to come into contact with a part of an upper surface of the semiconductor layer, and contains the current supply part coupled to a current supply line; an insulation layer which is formed on a region containing a part vertically downward from a formation region of the first electrode and comes into contact with a part of a bottom surface of the semiconductor layer; a second electrode which comes into contact with a part of the bottom surface of the semiconductor layer on a part of the region vertically downward from a non-formation region of the current supply part, and is formed of a material for reflecting emitted light from the light emitting layer; and a current interruption layer which is formed on a region closer to the current supply part than the second electrode on a part of the non-formation region vertically downward from the current supply part so as to come into contact with a part of the bottom surface of the semiconductor layer. A contact resistance at a contact part of the current interruption layer and the semiconductor layer, is higher than that at a contact part of the second electrode and the semiconductor layer. |
