| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that, in order to operate a superlattice phase change memory while saving power under an operation resistive state, it is necessary to change a resistive state of a recording and reproducing film from an initial resistive state to an operation resistive state.SOLUTION: Among a plurality of memory cells, in a memory cell of which the initial resistive state of the recording and reproducing film is out of a range of a predetermined resistance value, a resistive state of the recording and reproducing film is initialized from the initial resistive state to the operation resistive state. Specifically, in the case where a resistance value in the initial resistive state is higher than a resistance value in the operation resistive state, a voltage pulse for changing the resistive state of the recording and reproducing film from the initial resistive state to the operation resistive state is applied. In the case where the resistance value in the initial resistive state is lower than the resistance value in the operation resistive state, on the other hand, a voltage pulse for changing the resistive state of the recording and reproducing film from the initial resistive state to the operation resistive state is applied.</p> |
