| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device.SOLUTION: A semiconductor device comprises: a voltage fixing layer VC formed above a substrate S; a trench T which pierces a barrier layer BA among a channel base layer UC, a channel layer CH and the barrier layer BA to reach the middle of the channel layer CH; a gate electrode GE arranged in the trench T via a gate insulation film GI; a source electrode SE and a drain electrode DE which are formed on the barrier layer on both sides of the gate electrode GE, respectively. The voltage fixing layer VC and the source electrode SE are electrically connected by a connection VIA inside a through hole TH which reaches the voltage fixing layer VC. As a result, fluctuation in characteristics such as threshold voltage and on-resistance can be reduced. |
