| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which achieves reduction in on-state power loss and increase in breakdown resistance and which inhibits warpage of the device itself.SOLUTION: A semiconductor device comprises: linking regions 12 each of which has a constant trench gate distance and each of which has a smaller area and octagon-shaped regions 13 each of which has a larger area, which are formed at a cell corner part 11; and a high concentration P-type semiconductor layer 8 and a contact 9 which are provided in the octagon-shaped region 13. As a result, a gate capacitance ratio can be changed in a state of being insulated from an influence of a pattern in a main cell part and escape of hole carriers from the semiconductor device can be improved. In addition, warpage of the device itself can be inhibited by flexure of a second trench gate 2n. |
