DEFECT CONCENTRATION EVALUATION METHOD OF SILICON SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method capable of easily evaluating the concentration of a VV defect generated within a silicon single crystal substrate by irradiation with particle beams.SOLUTION: The method is disclosed for evaluating the concentration of the defect generated within the silicon single crystal substrate by the irradiation with particle beams. The defect concentration evaluation method of the silicon single crystal substrate includes: measuring resistivity of the silicon single crystal substrate; then irradiating the silicon single crystal substrate with the particle beams; measuring the resistivity of the silicon single crystal substrate again after the irradiation; calculating a variation of carrier concentrations by calculating the carrier concentrations within the silicon single crystal substrate before and after the irradiation from measurement results of the resistivity before and after the irradiation with the particle beams, respectively; and evaluating the concentration of the VV defect generated within the silicon single crystal substrate and formed from a silicon atom pore by the irradiation with the particle beams from the variation of the carrier concentrations.