SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can achieve low resistance of Cu wiring by using a low dielectric constant film which is high in intensity.SOLUTION: A semiconductor device manufacturing method comprises: a process of performing a nitrogen plasma treatment on a substrate having an interlayer insulation film composed of a fluorine-added carbon film, in which recesses of a predetermined pattern are formed on a surface; a process of subsequently and directly forming an Ru film on the fluorine-added carbon film which is subjected to the nitrogen plasma treatment; and a process of embedding a Cu film to be Cu wiring in the recesses.