发明名称 RADIATION IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a radiation image sensor that allows easily increasing a capacitance value per unit area of a capacitive element.SOLUTION: A radiation image sensor 1A includes a charge generation part 4 absorbing radiation and generating charges, and a circuit board 3 storing charges and transferring the charges. The circuit board 3 is formed on a semiconductor substrate 10, and has a capacitance part 5 storing charges, and a MOS-type transistor 7 formed on the semiconductor substrate 10, having one end connected to the capacitance part 5, and having the other end connected to data wiring 34 for transferring charges. The capacitance part 5 includes a partial region 10b of the semiconductor substrate 10, a conductor layer 31 provided on the partial region 10b and electrically connected to the charge generation part 4, and an insulating layer 22 sandwiched between the partial region 10b and the conductor layer 31.
申请公布号 JP2015115357(A) 申请公布日期 2015.06.22
申请号 JP20130254263 申请日期 2013.12.09
申请人 HAMAMATSU PHOTONICS KK 发明人 FUJITA KAZUKI;ICHIKAWA MINORU;MORI HARUMICHI
分类号 H01L27/144;H01L27/146;H04N5/32 主分类号 H01L27/144
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