SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device in which the dielectric breakdown resistance of a gate oxide film can be improved, and a method of manufacturing the silicon carbide semiconductor device. ! SOLUTION: A silicon carbide semiconductor device 1 comprises a silicon carbide substrate 10 and a gate oxide film 15. The gate oxide film 15 is in contact with a first main surface 10a of the silicon carbide substrate 10. The silicon carbide substrate 10 includes: a source region 14 having a first impurity; a body region 13 having a second impurity; and a drift region 12 separated from the source region 14 by the body region 13. In a cross-sectional view, the gate oxide film 15 includes a first region 15a in which the thickness of the gate oxide film 15 continuously increases from a first position 4b where a boundary 4a between the body region 13 and the source region 14 and the gate oxide film 15 are in contact with each other to a direction that is in parallel with a second main