DISPOSITIF DE MEMOIRE ASSOCIANT UN PLAN-MEMOIRE DU TYPE SRAM ET UN PLAN-MEMOIRE DU TYPE NON VOLATIL, ET PROCEDES DE FONCTIONNEMENT

摘要

A memory device includes at least one memory cell having a first SRAM-type elementary memory cell having two inverters coupled to one another crosswise and two groups, each having at least one non-volatile elementary memory cell. The non-volatile elementary memory cells of the two groups are coupled firstly to a supply terminal and secondly to the outputs and to the inputs of the two inverters via a controllable interconnection stage.