AMORPHOUS SILICON CRYSTALLIZING METHOD, CRYSTALLIZED SILICON FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND FILM FORMING APPARATUS

摘要

The present invention provides an amorphous silicon crystallizing method capable of obtaining a single crystal region with a large diameter without the degradation of productivity. The amorphous silicon crystallizing method for crystallizing amorphous silicon includes the steps of: stacking a second amorphous silicon film (3) with a crystal growth which is faster than the crystal growth of a first amorphous silicon film (2) on the first amorphous silicon film (2) with the slow crystal growth; and obtaining a crystallization silicon film (3a) by crystallizing at least the second amorphous silicon film (3) by performing a crystallization process with regard to the first and second amorphous silicon films (2,3) which are stacked.