发明名称 LANIO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LANIO3 THIN FILM USING THE SAME
摘要 <p>This LaNiO3 thin film-forming composition includes: LaNiO3 precursors; and acetic acid, wherein a ratio of an amount of the LaNiO3 precursors to 100 mass% of an amount of the LaNiO3 thin film-forming composition is in a range of 1 mass% to 20 mass% in terms of oxides, and the composition further includes a stabilizer containing N-methyl formamide in an amount of more than 0 mol to 10 mol or less per I mol of the 10 total amount of the LaNiO3 precursors in the composition. FIG. 1</p>
申请公布号 IN467DE2014(A) 申请公布日期 2015.06.19
申请号 IN2014DE00467 申请日期 2014.02.18
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 FUJII, JUN;SAKURAI, HIDEAKI;SOYAMA, NOBUYUKI
分类号 H01B1/08 主分类号 H01B1/08
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