发明名称 |
LANIO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LANIO3 THIN FILM USING THE SAME |
摘要 |
<p>This LaNiO3 thin film-forming composition includes: LaNiO3 precursors; and acetic acid, wherein a ratio of an amount of the LaNiO3 precursors to 100 mass% of an amount of the LaNiO3 thin film-forming composition is in a range of 1 mass% to 20 mass% in terms of oxides, and the composition further includes a stabilizer containing N-methyl formamide in an amount of more than 0 mol to 10 mol or less per I mol of the 10 total amount of the LaNiO3 precursors in the composition. FIG. 1</p> |
申请公布号 |
IN467DE2014(A) |
申请公布日期 |
2015.06.19 |
申请号 |
IN2014DE00467 |
申请日期 |
2014.02.18 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
FUJII, JUN;SAKURAI, HIDEAKI;SOYAMA, NOBUYUKI |
分类号 |
H01B1/08 |
主分类号 |
H01B1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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