发明名称 DEVICE HAVING MULTIPLE-LAYER PINS IN MEMORY MUX1 LAYOUT
摘要 An integrated circuit (IC) memory device comprises a first conductive layer; a second conductive layer formed on the first conductive layer, and electrically connected to the first conductive layer; a third conductive layer formed on the second conductive layer, and separate from the second conductive layer; a fourth conductive layer formed on the third conductive layer, and electrically connected to the third conductive layer; and a 2P2E pin box formed in the first conductive layer or the second conductive layer, and electrically connected to the first conductive layer or the second conductive layer; and an 1P1E pin box formed in the third conductive layer or the fourth conductive layer, and electrically connected to the third conductive layer or the fourth conductive layer.
申请公布号 KR20150068320(A) 申请公布日期 2015.06.19
申请号 KR20140177305 申请日期 2014.12.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIAO HUNG JEN;CHEN JUNG HSUAN;TIEN CHIEN CHI;WU CHING WEI;TSAI JUI CHE;CHENG HONG CHEN;WANG CHUNG HSING
分类号 H01L21/027;H01L21/4757;H01L27/11 主分类号 H01L21/027
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