SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

In a method for manufacturing a semiconductor device, a dummy gate electrode and a dummy gate structure including a gate mask sequentially stacked on a substrate are formed. A spacer is formed on a side wall of the dummy gate structure. The dummy gate electrode is exposed by removing the gate mask, and a recess is formed on an upper part of the space at that time. A capping film pattern filling the recess is formed. The exposed dummy gate electrode is replaced by the gate electrode.